1/10 april 2004 stD1703L n-channel 30v - 0.038 ? - 17a - dpak stripfet? ii mosfet typical r ds (on) = 0.038 ? application oriented characterization description this mosfet is the latest development of stmi- croelectronics unique ?single feature size? ? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications dc-dc converters linear post regulation ordering information type v dss r ds(on) i d stD1703L 30 v <0.05 ? 17 a sales type marking package packaging stD1703Lt4 D1703L dpak tape & reel dpak 1 3 internal schematic diagram
stD1703L 2/10 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 17a, di/dt 300a/s, v dd v (br)dss ,t j t jmax. (2) starting t j =25 c, i d =11a, v dd =15v thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (1) dynamic symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k ? ) 30 v v gs gate- source voltage 20 v i d drain current (continuous) at t c =25 c 17 a i d drain current (continuous) at t c = 100 c 12 a i dm ( ) drain current (pulsed) 68 a p tot total dissipation at t c =25 c 20 w derating factor 0.13 w/ c dv/dt (1) peak diode recovery voltage slope 6 v/ns e as (2) single pulse avalanche energy 200 mj t stg storage temperature ? 65 to 175 c t j max. operating junction temperature 175 c rthj-case thermal resistance junction-case max 7.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250a,v gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds =maxrating,t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 15v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d =250a 1v r ds(on) static drain-source on resistance v gs = 10v, i d =8.5a 0.038 0.05 ? v gs =5v,i d =8.5a 0.045 0.06 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =11a 7s c iss input capacitance v ds =25v,f=1mhz,v gs =0 330 pf c oss output capacitance 90 pf c rss reverse transfer capacitance 40 pf
3/10 stD1703L thermal impedence electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15v,i d =8.5a r g =4.7 ? v gs =4.5v (see test circuit, figure 3) 11 ns t r rise time 100 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24v,i d =17a, v gs =10v 6.5 3.6 2 9nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =15v,i d =8.5a, r g =4.7 ?, v gs =4.5v (see test circuit, figure 3) 25 22 ns ns t r(off) t f t c off-voltage rise time fall time cross-over time vclamp =24v, i d =17a r g =4.7 ?, v gs =4.5v (see test circuit, figure 5) 22 55 75 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 17 a i sdm (1) source-drain current (pulsed) 68 a v sd (2) forwardonvoltage i sd =17a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =17a,di/dt=100a/s, v dd =15v,t j = 150 c (see test circuit, figure 5) 30 18 1.2 ns nc a safe operating area
stD1703L 4/10 output characteristics static drain-source on resistance transfer characteristics transconductance gate charge vs gate-source voltage capacitance variations
5/10 stD1703L source-drain diode forward characteristics normalized gate thereshold voltage vs temp. normalized on resistance vs temperature
stD1703L 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/10 stD1703L dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
stD1703L 8/10 dim. mm. inch min. typ max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.00 0.127 0.00 0.005 b 1.350 1.650 0.053 0.065 b 0.50 0.70 0.020 0.028 b1 0.70 0.90 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 d 6.350 6.650 0.250 0.262 d1 5.20 5.40 0.205 0.213 e 5.40 5.70 0.213 0.224 e2.30 0.091 e1 4.50 4.70 0.177 0.185 l 9.50 9.90 0.374 0.390 l1 2.550 2.900 0.10 0.114 l2 1.40 1.780 0.055 0.070 l3 0.35 0.65 0.014 0.026 v 3.80 ref 0.150 ref to-252 (dpak) mechanical data
9/10 stD1703L to-252 (dpak) mechanical data
stD1703L 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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